AlGaN/GaN MIS-HEMTs With High Quality ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors (MIS-HEMTs) with high quality Al<sub>2</sub>O<sub>3</sub> gate dielectric deposited by plasma enhanced atomic layer deposition using both H<sub>2<...

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Bibliographic Details
Main Authors: Huan-Chung Wang, Ting-En Hsieh, Yueh-Chin Lin, Quang Ho Luc, Shih-Chien Liu, Chia-Hsun Wu, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN
MIS-HEMT
Al₂O₃
PEALD
oxygen plasma
Online Access:https://ieeexplore.ieee.org/document/8125685/

Internet

https://ieeexplore.ieee.org/document/8125685/

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