High-Performance GaN Vertical <italic>p-i-n</italic> Diodes via Silicon Nitride Shadowed Selective-Area Growth and Optimized FGR- and JTE-Based Edge Termination
In this work, we develop highly efficient ET schemes based on a selective-area processing methodology that can effectively stymie device leakage, resulting in reliable device operation. In particular, we demonstrate plasma-assisted molecular-beam epitaxy (PAMBE) facilitated silicon nitride shadowed...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9269357/ |