Effect of Dopants on Epitaxial Growth of Silicon Nanowires

Effect of Dopants on Epitaxial Growth of Silicon Nanowires

We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertic...

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Bibliographic Details
Main Authors: Sung Hwan Chung, Sarath Ramadurgam, Chen Yang
Format: Article
Language:English
Published: SAGE Publishing 2014-02-01
Series:Nanomaterials and Nanotechnology
Subjects:
Nanowires
Epitaxial Growth
Dopant
Online Access:http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/effect-of-dopants-on-epitaxial-growth-of-silicon-nanowires

Internet

http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/effect-of-dopants-on-epitaxial-growth-of-silicon-nanowires

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