Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD

Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD

The integration of photonic materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD) was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er)) on Si substrates at low...

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Bibliographic Details
Main Authors: Hui-Lin Hsu, Keith R. Leong, I-Ju Teng, Michael Halamicek, Jenh-Yih Juang, Sheng-Rui Jian, Li Qian, Nazir P. Kherani
Format: Article
Language:English
Published: MDPI AG 2014-02-01
Series:Materials
Subjects:
RF-PEMOCVD
erbium metal-organic compound
deuterated amorphous carbon (a-C:D)
fluorination
Online Access:http://www.mdpi.com/1996-1944/7/3/1539

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http://www.mdpi.com/1996-1944/7/3/1539

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