HgCdTe e-avalanche photodiode detector arrays
Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4929773 |