1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on wh...

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Bibliographic Details
Main Authors: Haiyong Wang, Wei Mao, Shenglei Zhao, Ming Du, Yachao Zhang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN
HEMT
reverse blocking
ultralow turn-on voltage
hybrid Schottky-ohmic drain with tungsten
Online Access:https://ieeexplore.ieee.org/document/9279331/

Internet

https://ieeexplore.ieee.org/document/9279331/

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