Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p<sup>++</sup>-GaAs/n<sup>++...

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Bibliographic Details
Main Authors: Yudan Gou, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao, Heng Liu, Shaoyang Tan, Li Zhou, Huomu Yang, Guoliang Deng, Shouhuan Zhou
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Crystals
Subjects:
tunnel junction
MOCVD
quantum well
co-doping
solar cells
Online Access:https://www.mdpi.com/2073-4352/10/12/1092

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https://www.mdpi.com/2073-4352/10/12/1092

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