Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe

Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe

Magnetic properties of single crystalline Ga1−xFexTe (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear respon...

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Bibliographic Details
Main Authors: T. M. Pekarek, P. S. Edwards, T. L. Olejniczak, C. Lampropoulos, I. Miotkowski, A. K. Ramdas
Format: Article
Language:English
Published: AIP Publishing LLC 2016-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4945335

Internet

http://dx.doi.org/10.1063/1.4945335

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