Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
High-quality Ga2O3 thin films in the orthorhombic κ-phase are grown by pulsed-laser deposition using a tin containing target on c-sapphire, MgO(111), SrTiO3(111), and yttria-stabilized ZrO2(111) substrates. The structural quality of the layers is studied based on the growth parameters employing X-ra...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5054378 |