Indium Silicon Oxide TFT Fully Photolithographically Processed for Circuit Integration
A new class of amorphous oxide semiconductors based on InO<sub>x</sub> doped with Ti, W or Si seems to show great promise for large area, flexible, electronics. Of particular interest is the In<sub>2</sub>O<sub>3</sub>:SiO<sub>2</sub> system as it has...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9170630/ |