Characteristics of p-Type Conduction in P-Doped MoS<sub>2</sub> by Phosphorous Pentoxide during Chemical Vapor Deposition
We demonstrated p-type conduction in MoS<sub>2</sub> grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS<sub>2</sub> with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman si...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-09-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/9/9/1278 |