Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs
A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into account the pasmon–phonon coupling,...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2020-09-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/64492/download/pdf/ |