Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Abstract A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than...

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Bibliographic Details
Main Authors: Fang-Yuan Yuan, Ning Deng, Chih-Cheng Shih, Yi-Ting Tseng, Ting-Chang Chang, Kuan-Chang Chang, Ming-Hui Wang, Wen-Chung Chen, Hao-Xuan Zheng, Huaqiang Wu, He Qian, Simon M. Sze
Format: Article
Language:English
Published: SpringerOpen 2017-10-01
Series:Nanoscale Research Letters
Subjects:
HfO2-based RRAM
Nitridation
Endurance
Space charge limit current
Online Access:http://link.springer.com/article/10.1186/s11671-017-2330-3

Internet

http://link.springer.com/article/10.1186/s11671-017-2330-3

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