ANALYSIS OF STATIC NOISE MARGIN FOR NOVEL POWER GATED SRAM
Data stability is one of the important parameter of SRAM with scaling of CMOS technology. However the move to nanometer technology not only nodes has increased, but the variability in device characteristics has also increased due to large process variations. Static random access memory (SRAM) is...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
ICT Academy of Tamil Nadu
2016-10-01
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| Series: | ICTACT Journal on Microelectronics |
| Subjects: | |
| Online Access: | http://ictactjournals.in/paper/IJME_V2_I3_paper_2_265_268.pdf |