A hierarchy of hydrodynamic models for silicon carbide semiconductors
The electro-thermal transport in silicon carbide semiconductors can be described by an extended hydrodynamic model, obtained by taking moments from kinetic equations, and using the Maximum Entropy Principle. By performing appropriate scaling, one can obtain reduced transport models such as the Energ...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sciendo
2017-12-01
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| Series: | Communications in Applied and Industrial Mathematics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/caim-2017-0013 |