Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors

Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors

We have investigated the effect of electron effective mass (<i>m</i><sub>e</sub>*) and tail acceptor-like edge traps density (<i>N</i><sub>TA</sub>) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through nu...

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Bibliographic Details
Main Authors: Jihwan Park, Do-Kyung Kim, Jun-Ik Park, In Man Kang, Jaewon Jang, Hyeok Kim, Philippe Lang, Jin-Hyuk Bae
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Electronics
Subjects:
a-igzo thin-film transistors
effective mass
numerical simulation
electrical characteristics
scattering
Online Access:https://www.mdpi.com/2079-9292/9/1/119

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https://www.mdpi.com/2079-9292/9/1/119

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