0.7-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula>m InP DHBT Technology With 400-GHz <inline-formula> <tex-math notation="LaTeX">${f}_{{T}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${f}_{\text{MAX}}$ </tex-math></inline-formula> and 4.5-V BV<sub>CE0</sub> for High Speed and High Frequency Integrated Circuits

0.7-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula>m InP DHBT Technology With 400-GHz <inline-formula> <tex-math notation="LaTeX">${f}_{{T}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${f}_{\text{MAX}}$ </tex-math></inline-formula> and 4.5-V BV<sub>CE0</sub> for High Speed and High Frequency Integrated Circuits

We report the performances of a 0.7-&#x03BC;m InP/GaInAs DHBT developed in III-V Lab demonstrating both f<sub>T</sub> and f <sub>MAX</sub> of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a ve...

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Bibliographic Details
Main Authors: V. Nodjiadjim, M. Riet, C. Mismer, R. Hersent, F. Jorge, A. Konczykowska, J.-Y. Dupuy
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Heterojunction bipolar transistor
InP/GaInAs DHBT
integrated circuits
Online Access:https://ieeexplore.ieee.org/document/8762198/

Internet

https://ieeexplore.ieee.org/document/8762198/

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