Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...

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Bibliographic Details
Main Authors: Abhinay Sandupatla, Subramaniam Arulkumaran, Ng Geok Ing, Shugo Nitta, John Kennedy, Hiroshi Amano
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Micromachines
Subjects:
GaN-on-GaN
schottky barrier diodes
high-energy α-particle detection
low voltage
thick depletion width detectors
Online Access:https://www.mdpi.com/2072-666X/11/5/519

Internet

https://www.mdpi.com/2072-666X/11/5/519

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