Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the pr...

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Bibliographic Details
Main Authors: Mohi Uddin Jewel, Mahmuda Akter Monne, Bhagyashree Mishra, Maggie Yihong Chen
Format: Article
Published: MDPI AG 2020-02-01
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