Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the pr...

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Bibliographic Details
Main Authors: Mohi Uddin Jewel, Mahmuda Akter Monne, Bhagyashree Mishra, Maggie Yihong Chen
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Molecules
Subjects:
inkjet printing
graphene
molybdenum disulfide
raman
thin-films
cross-section
nanosheets
on/off ratio
transistor
Online Access:https://www.mdpi.com/1420-3049/25/5/1081

Internet

https://www.mdpi.com/1420-3049/25/5/1081

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