Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode. In this configuration, p-GaN body-diode-based back-gate control is used to shift the threshold voltage and...

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Bibliographic Details
Main Authors: Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN HEMT
dynamic body-biasing
body-diode
back-gate
threshold voltage shift
Online Access:https://ieeexplore.ieee.org/document/8707067/

Internet

https://ieeexplore.ieee.org/document/8707067/

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