Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Abstract The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface....

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Bibliographic Details
Main Authors: Tianbao Li, Chenyang Liu, Zhe Zhang, Bin Yu, Hailiang Dong, Wei Jia, Zhigang Jia, Chunyan Yu, Lin Gan, Bingshe Xu, Haiwei Jiang
Format: Article
Language:English
Published: SpringerOpen 2018-04-01
Series:Nanoscale Research Letters
Subjects:
Mechanical exfoliation graphite
GaN
Growth mechanism
Highly oriented pyrolytic graphite (HOPG)
Online Access:http://link.springer.com/article/10.1186/s11671-018-2546-x

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http://link.springer.com/article/10.1186/s11671-018-2546-x

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