Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field
We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P)-to-anti-parallel (AP) and AP-to-P sw...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4977224 |