High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET

High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET

High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical model. We found that the experimental current gai...

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Bibliographic Details
Main Authors: Takayuki Iwasaki, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Diamond
JFET
bipolar-mode operation
normally-off
high temperature
Online Access:https://ieeexplore.ieee.org/document/7731175/

Internet

https://ieeexplore.ieee.org/document/7731175/

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