High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET
High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical model. We found that the experimental current gai...
Main Authors: | , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2017-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7731175/ |
id |
doaj-dac16a652fc2436188143c5d33dc5d80 |
---|---|
record_format |
Article |
spelling |
doaj-dac16a652fc2436188143c5d33dc5d802021-03-29T18:44:10ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-0151959910.1109/JEDS.2016.26243017731175High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFETTakayuki Iwasaki0https://orcid.org/0000-0001-6319-7718Hiromitsu Kato1Toshiharu Makino2Masahiko Ogura3Daisuke Takeuchi4Satoshi Yamasaki5Mutsuko Hatano6Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, JapanCREST, Tokyo, JapanCREST, Tokyo, JapanCREST, Tokyo, JapanCREST, Tokyo, JapanCREST, Tokyo, JapanDepartment of Physical Electronics, Tokyo Institute of Technology, Tokyo, JapanHigh temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical model. We found that the experimental current gain decreased with the rise in the gate current, in agreement with the theoretical estimation considering the recombination at the end regions. We achieved 4-9 times higher drain currents in the bipolar-mode compared with the unipolar-mode operation at a DC current gain of 10. Furthermore, the bipolar-mode currents at the high temperatures of 473 and 573 K became two orders of magnitude larger than the unipolar-mode current at room temperature with a large DC current gain of 10<sup>2</sup>.https://ieeexplore.ieee.org/document/7731175/DiamondJFETbipolar-mode operationnormally-offhigh temperature |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Takayuki Iwasaki Hiromitsu Kato Toshiharu Makino Masahiko Ogura Daisuke Takeuchi Satoshi Yamasaki Mutsuko Hatano |
spellingShingle |
Takayuki Iwasaki Hiromitsu Kato Toshiharu Makino Masahiko Ogura Daisuke Takeuchi Satoshi Yamasaki Mutsuko Hatano High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET IEEE Journal of the Electron Devices Society Diamond JFET bipolar-mode operation normally-off high temperature |
author_facet |
Takayuki Iwasaki Hiromitsu Kato Toshiharu Makino Masahiko Ogura Daisuke Takeuchi Satoshi Yamasaki Mutsuko Hatano |
author_sort |
Takayuki Iwasaki |
title |
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET |
title_short |
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET |
title_full |
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET |
title_fullStr |
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET |
title_full_unstemmed |
High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET |
title_sort |
high-temperature bipolar-mode operation of normally-off diamond jfet |
publisher |
IEEE |
series |
IEEE Journal of the Electron Devices Society |
issn |
2168-6734 |
publishDate |
2017-01-01 |
description |
High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical model. We found that the experimental current gain decreased with the rise in the gate current, in agreement with the theoretical estimation considering the recombination at the end regions. We achieved 4-9 times higher drain currents in the bipolar-mode compared with the unipolar-mode operation at a DC current gain of 10. Furthermore, the bipolar-mode currents at the high temperatures of 473 and 573 K became two orders of magnitude larger than the unipolar-mode current at room temperature with a large DC current gain of 10<sup>2</sup>. |
topic |
Diamond JFET bipolar-mode operation normally-off high temperature |
url |
https://ieeexplore.ieee.org/document/7731175/ |
work_keys_str_mv |
AT takayukiiwasaki hightemperaturebipolarmodeoperationofnormallyoffdiamondjfet AT hiromitsukato hightemperaturebipolarmodeoperationofnormallyoffdiamondjfet AT toshiharumakino hightemperaturebipolarmodeoperationofnormallyoffdiamondjfet AT masahikoogura hightemperaturebipolarmodeoperationofnormallyoffdiamondjfet AT daisuketakeuchi hightemperaturebipolarmodeoperationofnormallyoffdiamondjfet AT satoshiyamasaki hightemperaturebipolarmodeoperationofnormallyoffdiamondjfet AT mutsukohatano hightemperaturebipolarmodeoperationofnormallyoffdiamondjfet |
_version_ |
1724196542694293504 |