High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET
High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical model. We found that the experimental current gai...
Main Authors: | Takayuki Iwasaki, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano |
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Format: | Article |
Language: | English |
Published: |
IEEE
2017-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7731175/ |
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