Combined Implications of UV/O<sub>3</sub> Interface Modulation with HfSiO<sub>X</sub> Surface Passivation on AlGaN/AlN/GaN MOS-HEMT
Surface passivation is critically important to improve the current collapse and the overall device performance in metal-oxide semiconductor high-electron mobility transistors (MOS-HEMTs) and, thus, their reliability. In this paper, we demonstrate the surface passivation effects in AlGaN/AlN/GaN-base...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-01-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/11/2/136 |