RF-MBE growth and orientation control of GaN on epitaxial graphene

RF-MBE growth and orientation control of GaN on epitaxial graphene

GaN is proven as the most important modern semiconductor with many potential applications. Although GaN growth is matured enough, unfortunately, it is still very difficult to obtain this material with the same quality as the Si crystal, either in heteroepitaxy or homoepitaxy. GaN has recently been p...

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Bibliographic Details
Main Authors: Ashraful G. Bhuiyan, Yuta Kamada, Md. Sherajul Islam, Riku Syamoto, Daiki Ishimaru, Akihiro Hashimoto
Format: Article
Language:English
Published: Elsevier 2021-01-01
Series:Results in Physics
Subjects:
GaN
Epitaxial graphene
RF-MBE
AlN intermediate layer
AFM
Raman
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379720321306

Internet

http://www.sciencedirect.com/science/article/pii/S2211379720321306

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