Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equiv...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-07-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/9/15/3054 |