Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 sub...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Iran University of Science & Technology
2019-06-01
|
| Series: | Iranian Journal of Materials Science and Engineering |
| Subjects: | |
| Online Access: | http://ijmse.iust.ac.ir/article-1-1153-en.html |