Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN
Two-dimensional (2D) semiconductors exhibit great potential to minimize the size and drastically reduce the energy consumption of optoelectronic devices due to promising features induced by quantum confinement. It has achieved many successes in infrared and visible light optoelectronic devices. The...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2020-07-01
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| Series: | International Journal of Smart and Nano Materials |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/19475411.2020.1801879 |