Nonvolatile Spintronic Memory Array Performance Benchmarking Based on Three-Terminal Memory Cell
For the conventional spin-transfer torque random access memory, tradeoffs exist between read margin and write energy because both read and write currents pass through the same magnetic tunnel junction. To improve the read/write performance and reduce the read disturb rate, three-terminal memory cell...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
|
| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7856892/ |