Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs) by using metal extensions (Hafnium) at the s...

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Bibliographic Details
Main Authors: Faisal Bashir, Abdullah G. Alharbi, Sajad A. Loan
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Electrostatically doped
charge plasma
source extensions
Schottky barrier
DSL
SOI
Online Access:https://ieeexplore.ieee.org/document/8067464/

Internet

https://ieeexplore.ieee.org/document/8067464/

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