Growth and investigation of epitaxial GaBiAs layers / Epitaksinių GaBiAs sluoksnių auginimas ir savybių tyrimas
In this work the influence of technological parameters – Tp substrate temperature and Bi flux – on structural, electrical and optical properties of GaBiAs layers was investigated. Thin Ga-BiAs layers have been grown by molecular beam epitaxy tech-nology on monocrystalline GaAs substrates. The surfa...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Vilnius Gediminas Technical University
2011-08-01
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| Series: | Mokslas: Lietuvos Ateitis |
| Subjects: | |
| Online Access: | https://www.jbem.vgtu.lt/index.php/MLA/article/view/4999 |