Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation

Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation

Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-I...

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Bibliographic Details
Main Authors: OO Myo Min, Rashid Nahrul Khair Bin Alang Md, Karim Julia Bin Abdul, Mohamed Zin Muhammad Rawi Bin, Rahim Rosminazuin Bt.Ab., Azman Amelia Wong, Hasbullah Nurul Fadzlin
Format: Article
Language:English
Published: VINCA Institute of Nuclear Sciences 2014-01-01
Series:Nuclear Technology and Radiation Protection
Subjects:
bipolar junction transistor
displacement damage
ionizing damage
recombination current
Online Access:http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941401046O.pdf

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http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941401046O.pdf

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