Structural analysis of anodic porous alumina used for resistive random access memory
Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two laye...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2010-01-01
|
| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://iopscience.iop.org/1468-6996/11/2/025002 |