Structural analysis of anodic porous alumina used for resistive random access memory

Structural analysis of anodic porous alumina used for resistive random access memory

Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two laye...

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Main Author: Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
Format: Article
Language:English
Published: Taylor & Francis Group 2010-01-01
Series:Science and Technology of Advanced Materials
Online Access:http://iopscience.iop.org/1468-6996/11/2/025002
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spelling doaj-dc0dd422469a4fa090d192872ca089772020-11-24T23:53:37ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142010-01-01112025002Structural analysis of anodic porous alumina used for resistive random access memoryJeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu KidoAnodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area.http://iopscience.iop.org/1468-6996/11/2/025002
collection DOAJ
language English
format Article
sources DOAJ
author Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
spellingShingle Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
Structural analysis of anodic porous alumina used for resistive random access memory
Science and Technology of Advanced Materials
author_facet Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
author_sort Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
title Structural analysis of anodic porous alumina used for resistive random access memory
title_short Structural analysis of anodic porous alumina used for resistive random access memory
title_full Structural analysis of anodic porous alumina used for resistive random access memory
title_fullStr Structural analysis of anodic porous alumina used for resistive random access memory
title_full_unstemmed Structural analysis of anodic porous alumina used for resistive random access memory
title_sort structural analysis of anodic porous alumina used for resistive random access memory
publisher Taylor & Francis Group
series Science and Technology of Advanced Materials
issn 1468-6996
1878-5514
publishDate 2010-01-01
description Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area.
url http://iopscience.iop.org/1468-6996/11/2/025002
work_keys_str_mv AT jeungwooleeseisukenigoyoshihironakanoseiichikatohideakikitazawaandgiyuukido structuralanalysisofanodicporousaluminausedforresistiverandomaccessmemory
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