Structural analysis of anodic porous alumina used for resistive random access memory
Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two laye...
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doaj-dc0dd422469a4fa090d192872ca089772020-11-24T23:53:37ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142010-01-01112025002Structural analysis of anodic porous alumina used for resistive random access memoryJeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu KidoAnodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area.http://iopscience.iop.org/1468-6996/11/2/025002 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido |
spellingShingle |
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido Structural analysis of anodic porous alumina used for resistive random access memory Science and Technology of Advanced Materials |
author_facet |
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido |
author_sort |
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido |
title |
Structural analysis of anodic porous alumina used for resistive random access memory |
title_short |
Structural analysis of anodic porous alumina used for resistive random access memory |
title_full |
Structural analysis of anodic porous alumina used for resistive random access memory |
title_fullStr |
Structural analysis of anodic porous alumina used for resistive random access memory |
title_full_unstemmed |
Structural analysis of anodic porous alumina used for resistive random access memory |
title_sort |
structural analysis of anodic porous alumina used for resistive random access memory |
publisher |
Taylor & Francis Group |
series |
Science and Technology of Advanced Materials |
issn |
1468-6996 1878-5514 |
publishDate |
2010-01-01 |
description |
Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area. |
url |
http://iopscience.iop.org/1468-6996/11/2/025002 |
work_keys_str_mv |
AT jeungwooleeseisukenigoyoshihironakanoseiichikatohideakikitazawaandgiyuukido structuralanalysisofanodicporousaluminausedforresistiverandomaccessmemory |
_version_ |
1725468878772895744 |