VOLT-AMPERE CHARACTERISTIC AND INDUCED CURRENT IN THE EXTERNAL CIRCUIT OF AVALANCHE-GENERATOR DIODES ON THE BASIS OF THE BACK DISPLACED ABRUPT P–N-JUNCTIONS
Creation of modern solid-state microwave power sources is based on the application of active elements with expanded functionality. The reverse-biased p–n-junctions with DC voltage are active elements of diodes generators. Avalanche-generator diodes (AGD) based on reverse-biased abrupt p–n-juncti...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Akademperiodyka
2015-12-01
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| Series: | Радиофизика и электроника |
| Subjects: | |
| Online Access: | http://re-journal.org.ua/sites/default/files/file_attach/2015-4/7.pdf |