Radiation Resistance of Epitaxial Structures Based on GaAs
This paper presents the results of a study on the irradiation of heterostructures based on gallium arsenide with neutrons and gamma rays. The horizontal channel of the IRT-2000 reactor with an energy of 2.65 MeV served as a source of neutrons. Two types of structures were considered: autoepitaxial (...
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| Format: | Article |
| Language: | Russian |
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MIREA - Russian Technological University
2019-06-01
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| Series: | Российский технологический журнал |
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| Online Access: | https://www.rtj-mirea.ru/jour/article/view/154 |