Structural changes induced by argon ion irradiation in TiN thin films

In this work, the effects of 120 keV Ar+ ion implantation on the structural properties of TiN thin films were investigated. TiN layers were deposited by d.c. reactive sputtering on Si(100) wafers at room temperature or at 150°C. The thickness of TiN layers was ~240 nm. After deposition the samples w...

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Bibliographic Details
Main Authors: Maja Popović, Mirjana Novaković, Zlatko Rakočević, Nataša Bibić
Format: Article
Language:English
Published: University of Novi Sad 2011-03-01
Series:Processing and Application of Ceramics
Subjects:
TiN
TEM
AFM
Online Access:http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2011%2003.pdf