Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film
: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2015-09-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/8/9/5316 |