Pronounced Impact of <i>p</i>-Type Carriers and Reduction of Bandgap in Semiconducting ZnTe Thin Films by Cu Doping for Intermediate Buffer Layer in Heterojunction Solar Cells

Pronounced Impact of <i>p</i>-Type Carriers and Reduction of Bandgap in Semiconducting ZnTe Thin Films by Cu Doping for Intermediate Buffer Layer in Heterojunction Solar Cells

Stabilized un-doped Zinc Telluride (ZnTe) thin films were grown on glass substrates under vacuum using a closed space sublimation (CSS) technique. A dilute copper nitrate solution (0.1/100 mL) was prepared for copper doping, known as an ion exchange process, in the matrix of the ZnTe thin film. The...

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Bibliographic Details
Main Authors: Waqar Mahmood, Saif Ullah Awan, Amad Ud Din, Junaid Ali, Muhammad Farooq Nasir, Nazakat Ali, Anwar ul Haq, Muhammad Kamran, Bushra Parveen, Muhammad Rafiq, Nazar Abbas Shah
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Materials
Subjects:
semiconductor thin films
CSS
ion-exchange
XRD
SEM
<i>p</i>-type carriers
band gap
solar cell
Online Access:https://www.mdpi.com/1996-1944/12/8/1359

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https://www.mdpi.com/1996-1944/12/8/1359

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