Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) Heterojunctions

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) Heterojunctions

Abstract The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga2O3...

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Bibliographic Details
Main Authors: Shun-Ming Sun, Wen-Jun Liu, Yi-Fan Xiao, Ya-Wei Huan, Hao Liu, Shi-Jin Ding, David Wei Zhang
Format: Article
Language:English
Published: SpringerOpen 2018-12-01
Series:Nanoscale Research Letters
Subjects:
β-Ga2O3
Contacts
ZnO
ALD
Online Access:http://link.springer.com/article/10.1186/s11671-018-2832-7

Internet

http://link.springer.com/article/10.1186/s11671-018-2832-7

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