Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Abstract The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of tr...

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Bibliographic Details
Main Authors: Wei Zhang, Ji-Zhou Kong, Zheng-Yi Cao, Ai-Dong Li, Lai-Guo Wang, Lin Zhu, Xin Li, Yan-Qiang Cao, Di Wu
Format: Article
Language:English
Published: SpringerOpen 2017-06-01
Series:Nanoscale Research Letters
Subjects:
Atomic layer deposition
Resistive random access memory
Bottom electrode
Resistive switching parameters
Oxygen vacancy concentration
Trilayer structure
Online Access:http://link.springer.com/article/10.1186/s11671-017-2164-z

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http://link.springer.com/article/10.1186/s11671-017-2164-z

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