Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics
We have found the ferroelectric-like characteristics in atomic layer deposition (ALD) La2O3 films with thermal budget lower than 300oC in polarization-electric field (P-E) and capacitance-gate voltage (C-V) measurements on W/La2O3/W and W/La2O3/InGaAs capacitors. The observed hysteresis and saturati...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4999958 |