A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optim...

Full description

Bibliographic Details
Main Authors: Fanming Zeng, Judy Xilin An, Guangnan Zhou, Wenmao Li, Hui Wang, Tianli Duan, Lingli Jiang, Hongyu Yu
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Electronics
Subjects:
AlGaN/GaN
high-electron mobility transistor (HEMTs)
p-GaN
enhancement-mode
Online Access:https://www.mdpi.com/2079-9292/7/12/377

Internet

https://www.mdpi.com/2079-9292/7/12/377

Similar Items