Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device

Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films with dense surfaces and uniform grains were prepared by the l...

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Bibliographic Details
Main Authors: Fengzhen Lv, Tingting Zhong, Yongfu Qin, Haijun Qin, Wenfeng Wang, Fuchi Liu, Wenjie Kong
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
light modulation
Cs<sub>2</sub>AgBiBr<sub>6</sub>
bipolar resistive switching behavior
bromine vacancy
space-charge-limited current mechanism
Schottky-like barrier
Online Access:https://www.mdpi.com/2079-4991/11/6/1361

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https://www.mdpi.com/2079-4991/11/6/1361

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