Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device

Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films with dense surfaces and uniform grains were prepared by the l...

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Main Authors: Fengzhen Lv, Tingting Zhong, Yongfu Qin, Haijun Qin, Wenfeng Wang, Fuchi Liu, Wenjie Kong
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
light modulation
Cs<sub>2</sub>AgBiBr<sub>6</sub>
bipolar resistive switching behavior
bromine vacancy
space-charge-limited current mechanism
Schottky-like barrier
Online Access:https://www.mdpi.com/2079-4991/11/6/1361
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spelling doaj-de1ebac63e0043dfb4f99e6518fba47c2021-06-01T00:42:59ZengMDPI AGNanomaterials2079-49912021-05-01111361136110.3390/nano11061361Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory DeviceFengzhen Lv0Tingting Zhong1Yongfu Qin2Haijun Qin3Wenfeng Wang4Fuchi Liu5Wenjie Kong6Guangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaGuangxi Key Laboratory of Nuclear Physics and Technology, School of Physical Science and Technology, Guangxi Normal University, Guilin 541004, ChinaLight-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> film, Pt/Cs<sub>2</sub>AgBiBr<sub>6</sub>/ITO/glass, presents obvious bipolar resistive switching behavior. The <i>R</i><sub>OFF</sub>/<i>R</i><sub>ON</sub> ratio under 445 nm wavelength light illumination is ~100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs<sub>2</sub>AgBiBr<sub>6</sub> medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs<sub>2</sub>AgBiBr<sub>6</sub> interface under bias voltage sweeping.https://www.mdpi.com/2079-4991/11/6/1361light modulationCs<sub>2</sub>AgBiBr<sub>6</sub>bipolar resistive switching behaviorbromine vacancyspace-charge-limited current mechanismSchottky-like barrier
collection DOAJ
language English
format Article
sources DOAJ
author Fengzhen Lv
Tingting Zhong
Yongfu Qin
Haijun Qin
Wenfeng Wang
Fuchi Liu
Wenjie Kong
spellingShingle Fengzhen Lv
Tingting Zhong
Yongfu Qin
Haijun Qin
Wenfeng Wang
Fuchi Liu
Wenjie Kong
Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device
Nanomaterials
light modulation
Cs<sub>2</sub>AgBiBr<sub>6</sub>
bipolar resistive switching behavior
bromine vacancy
space-charge-limited current mechanism
Schottky-like barrier
author_facet Fengzhen Lv
Tingting Zhong
Yongfu Qin
Haijun Qin
Wenfeng Wang
Fuchi Liu
Wenjie Kong
author_sort Fengzhen Lv
title Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device
title_short Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device
title_full Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device
title_fullStr Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device
title_full_unstemmed Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device
title_sort resistive switching characteristics improved by visible-light irradiation in a cs<sub>2</sub>agbibr<sub>6</sub>-based memory device
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2021-05-01
description Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> film, Pt/Cs<sub>2</sub>AgBiBr<sub>6</sub>/ITO/glass, presents obvious bipolar resistive switching behavior. The <i>R</i><sub>OFF</sub>/<i>R</i><sub>ON</sub> ratio under 445 nm wavelength light illumination is ~100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs<sub>2</sub>AgBiBr<sub>6</sub> medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs<sub>2</sub>AgBiBr<sub>6</sub> interface under bias voltage sweeping.
topic light modulation
Cs<sub>2</sub>AgBiBr<sub>6</sub>
bipolar resistive switching behavior
bromine vacancy
space-charge-limited current mechanism
Schottky-like barrier
url https://www.mdpi.com/2079-4991/11/6/1361
work_keys_str_mv AT fengzhenlv resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice
AT tingtingzhong resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice
AT yongfuqin resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice
AT haijunqin resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice
AT wenfengwang resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice
AT fuchiliu resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice
AT wenjiekong resistiveswitchingcharacteristicsimprovedbyvisiblelightirradiationinacssub2subagbibrsub6subbasedmemorydevice
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