A stochastic model of gamma-ray induced oxide charge distribution and threshold voltage shift of MOS transistors
A stochastic model of gamma-ray radiation effects on the density of the induced charge in silicon dioxide films of MOS transistors is presented in this paper. It is assumed that both radiation induced charge generation and trapped charge recombination are stochastic processes. For estimating gam...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
VINCA Institute of Nuclear Sciences
2012-01-01
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| Series: | Nuclear Technology and Radiation Protection |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-3994/2012/1451-39941201033K.pdf |