Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, w...

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Bibliographic Details
Main Authors: Michael Zürch, Hung-Tzu Chang, Peter M. Kraus, Scott K. Cushing, Lauren J. Borja, Andrey Gandman, Christopher J. Kaplan, Myoung Hwan Oh, James S. Prell, David Prendergast, Chaitanya D. Pemmaraju, Daniel M. Neumark, Stephen R. Leone
Format: Article
Language:English
Published: AIP Publishing LLC and ACA 2017-07-01
Series:Structural Dynamics
Online Access:http://dx.doi.org/10.1063/1.4985056

Internet

http://dx.doi.org/10.1063/1.4985056

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