Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented. The simulations show that if the pn-junction and the hetero-junction coincide, the ban...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7006669/ |